NSTL国家科技图书文献中心

1. Thermal Rectification in Telescopic Nanowires:Impact of Thermal Boundary Resistance NSTL国家科技图书文献中心

Yashpreet Kaur | Saeko Tachikawa ... - 《ACS applied materials & interfaces》 - 2025,17(1) - 1883～1891 - 共9页

摘要： thermal boundary resistance between the thin part with | boundary resistance in determining thermal rectification. | A thermal* diode,which,by analogy to its* | building block for thermal circuits.To realize a thermal | diode,we demonstrate thermal* rectification in a GaAs*

关键词： thermal rectification | thermal boundary resistance | telescopic nanowire | GaAs | thermal conductivity | thermal bridge

2. Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer NSTL国家科技图书文献中心

Xu, Bin | Mu, Fengwen ... - 《Acta materialia》 - 2025,282 - 120458～ - 共12页 - 被引量：2

摘要：Thermal boundary resistance (TBR) in | semiconductor-on-diamond structure bottlenecks efficient heat | dissipation in electronic devices. In this study, to reduce | the TBR between GaN and diamond, surface-activated | bonding with a hybrid SiOx-Ar x-Ar ion source was

关键词： Interface | GaN | Diamond | Heat dissipation | Semiconductor | Interfacial thermal conductance

3. Suppressing embrittlement and enhancing thermal resistance of bulk superlattice alloys by controllable grain-boundary segregation NSTL国家科技图书文献中心

Liu W.-H. | Zhuang X.-Q.... - 《Acta materialia》 - 2025,283 - 120582～ - 共18页

摘要：Severe grain-boundary* embrittlement at ambient* | -boundary* brittleness in bulk L12 Co3Ti alloys is directly* | the boundary* plane, which fortunately, can be* | buffer significantly reduces the resistance* to* | . Moreover, the Co-atom segregation-induced grain-boundary

关键词： Compositional disordering | Grain-boundary segregation | Intergranular brittleness | Superlattice alloys

4. Lossless Phonon Transition Through GaN-Diamond and Si-Diamond Interfaces NSTL国家科技图书文献中心

Mohamadali Malakouti... | Kelly Woo ... - 《Advanced Electronic Materials》 - 2025,11(1) - 202400146～ - 共10页 - 被引量：2

摘要： these cases. Since thermal boundary resistance | role in overall thermal* resistance, this study* | ) thermal* boundary resistances by linking low- and high* | thermal conductivity, offers a viable solution in both | Advancing Silicon (Si) technology beyond

关键词： Diamond | Interface engineering | Moore's law | Thermal boundary resistance | Thermal management | Ultra-wide-bandgap | Wide-bandgap

5. Heat transport exploration through the GaN/diamond interfaces using machine learning potential NSTL国家科技图书文献中心

Zhanpeng Sun | Yunfei Song ... - 《International Journal of Heat and Mass Transfer》 - 2025,241(May) - 126724.1～126724.8 - 共8页

摘要：-dependent and interface atom-dependent thermal boundary | -power devices due to its inherently low thermal | challenge in effective thermal* management. In this* | that can improve the accuracy of thermal* property* | imprecise thermal* performance predictions for GaN/diamond*

关键词： GaN/diamond heterostructures | Machine learning potential | Molecular dynamics | Thermal boundary resistance

6. Understanding hydrogen and heat diffusion across c-Si/a-Si:H heterojunctions for improved thermal management in solar cells fabrication NSTL国家科技图书文献中心

Dettori, Riccardo | Melis, Claudio ... - 《Nanotechnology》 - 2025,36(15) - 共14页

摘要：, we explore the effects of thermal boundary | resistance as well as hydrogen diffusion on device | thermal properties on crystalline orientations, cooling | ( <= 10%) and specific orientations in enhancing thermal | , enabling improved thermal* management and long-term*

关键词： silicon | solar cell | heterostructures | molecular dynamics

7. Novel diamond and Ta-C composite coatings for efficient heat dissipation in GaN semiconductor devices NSTL国家科技图书文献中心

Guo, Kesheng | Wu, Shuai ... - 《Surface & Coatings Technology》 - 2025,497 - 共7页

摘要： revealed that the thermal* boundary resistance (TBR) of* | (NCD), reducing thermal* resistance. This composite* | displays. Due to GaN's low thermal* conductivity* | for thermal* management, but integrating* | This study addresses heat dissipation in GaN

关键词： Diamond | Ta-C coatings | GaN device | Heat dissipation

8. Regulated the orientation of graphene nanoplatelets via flow field in material extrusion for enhancing thermal conductivity NSTL国家科技图书文献中心

Gang Chen | Zhuandong Zhu ... - 《Additive Manufacturing》 - 2025,101 - 104718～ - 共14页

摘要： through-plane thermal* boundary resistance is also* | thermal conductivity while maintaining low filler | thermal conductivity. It was found that the orientation | printing speed, yields a superior thermal* conductivity of* | Developing polymer composites with high

关键词： Material extrusion additive manufacturing | Thermal conductivity | Filler orientation | Polymer composites

9. Analytical generalized thermal resistance model for conductive heat transfer in pebble beds based on heat flux weighted temperature difference NSTL国家科技图书文献中心

Yiyang Luo | Nan Gui ... - 《International Journal of Heat and Mass Transfer》 - 2025,236(Jan. Pt.2) - 126401.1～126401.18 - 共18页 - 被引量：2

摘要： flux boundary* conditions on thermal resistance is* | thermal resistance based on analytical solutions is | temperature difference in thermal* resistance modeling for* | significance than traditional thermal* resistance models. It* | resistance, making it a generalized thermal resistance

关键词： Analytical solution | Heat flux weighted thermal resistance | Contact resistance | Thermal discrete element method | Pebble bed

10. Structural and chemical transitions in diamond/dielectric/ Si heterostructures NSTL国家科技图书文献中心

Mandia, Ramandeep | Malakoutian, Mohamad...... - 《Acta materialia》 - 2025,292 - 121021～ - 共10页

摘要： reductions in the thermal* boundary resistance (TBR) between* | previous thermal* characterization study had revealed that* | engineering offers a viable route towards thermal* management* | Interfaces between polycrystalline (PC | ) diamond and Si substrates with thin dielectric

摘要： thermal boundary resistance between the thin part with | boundary resistance in determining thermal rectification. | A thermal* diode,which,by analogy to its* | building block for thermal circuits.To realize a thermal | diode,we demonstrate thermal* rectification in a GaAs*

关键词： thermal rectification | thermal boundary resistance | telescopic nanowire | GaAs | thermal conductivity | thermal bridge

摘要：Thermal boundary resistance (TBR) in | semiconductor-on-diamond structure bottlenecks efficient heat | dissipation in electronic devices. In this study, to reduce | the TBR between GaN and diamond, surface-activated | bonding with a hybrid SiOx-Ar x-Ar ion source was

关键词： Interface | GaN | Diamond | Heat dissipation | Semiconductor | Interfacial thermal conductance

摘要：Severe grain-boundary* embrittlement at ambient* | -boundary* brittleness in bulk L12 Co3Ti alloys is directly* | the boundary* plane, which fortunately, can be* | buffer significantly reduces the resistance* to* | . Moreover, the Co-atom segregation-induced grain-boundary

关键词： Compositional disordering | Grain-boundary segregation | Intergranular brittleness | Superlattice alloys

摘要： these cases. Since thermal boundary resistance | role in overall thermal* resistance, this study* | ) thermal* boundary resistances by linking low- and high* | thermal conductivity, offers a viable solution in both | Advancing Silicon (Si) technology beyond

关键词： Diamond | Interface engineering | Moore's law | Thermal boundary resistance | Thermal management | Ultra-wide-bandgap | Wide-bandgap

摘要：-dependent and interface atom-dependent thermal boundary | -power devices due to its inherently low thermal | challenge in effective thermal* management. In this* | that can improve the accuracy of thermal* property* | imprecise thermal* performance predictions for GaN/diamond*

关键词： GaN/diamond heterostructures | Machine learning potential | Molecular dynamics | Thermal boundary resistance

摘要：, we explore the effects of thermal boundary | resistance as well as hydrogen diffusion on device | thermal properties on crystalline orientations, cooling | ( <= 10%) and specific orientations in enhancing thermal | , enabling improved thermal* management and long-term*

关键词： silicon | solar cell | heterostructures | molecular dynamics

摘要： revealed that the thermal* boundary resistance (TBR) of* | (NCD), reducing thermal* resistance. This composite* | displays. Due to GaN's low thermal* conductivity* | for thermal* management, but integrating* | This study addresses heat dissipation in GaN

关键词： Diamond | Ta-C coatings | GaN device | Heat dissipation

摘要： through-plane thermal* boundary resistance is also* | thermal conductivity while maintaining low filler | thermal conductivity. It was found that the orientation | printing speed, yields a superior thermal* conductivity of* | Developing polymer composites with high

关键词： Material extrusion additive manufacturing | Thermal conductivity | Filler orientation | Polymer composites

摘要： flux boundary* conditions on thermal resistance is* | thermal resistance based on analytical solutions is | temperature difference in thermal* resistance modeling for* | significance than traditional thermal* resistance models. It* | resistance, making it a generalized thermal resistance

关键词： Analytical solution | Heat flux weighted thermal resistance | Contact resistance | Thermal discrete element method | Pebble bed

摘要： reductions in the thermal* boundary resistance (TBR) between* | previous thermal* characterization study had revealed that* | engineering offers a viable route towards thermal* management* | Interfaces between polycrystalline (PC | ) diamond and Si substrates with thin dielectric

关键词： Transmission electron microscopy | Analytical electron microscopy | EELS | Interfaces | Phonon transport

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： thermal boundary resistance between the thin part with | boundary resistance in determining thermal rectification. | A thermal diode,which,by analogy to its | building block for thermal circuits.To realize a thermal | diode,we demonstrate thermal rectification in a GaAs

关键词： thermal rectification | thermal boundary resistance | telescopic nanowire | GaAs | thermal conductivity | thermal bridge

摘要：Thermal boundary resistance (TBR) in | semiconductor-on-diamond structure bottlenecks efficient heat | dissipation in electronic devices. In this study, to reduce | the TBR between GaN and diamond, surface-activated | bonding with a hybrid SiOx-Ar x-Ar ion source was

关键词： Interface | GaN | Diamond | Heat dissipation | Semiconductor | Interfacial thermal conductance

摘要：Severe grain-boundary embrittlement at ambient | -boundary brittleness in bulk L12 Co3Ti alloys is directly | the boundary plane, which fortunately, can be | buffer significantly reduces the resistance to | . Moreover, the Co-atom segregation-induced grain-boundary

关键词： Compositional disordering | Grain-boundary segregation | Intergranular brittleness | Superlattice alloys

摘要： these cases. Since thermal boundary resistance | role in overall thermal resistance, this study | ) thermal boundary resistances by linking low- and high | thermal conductivity, offers a viable solution in both | Advancing Silicon (Si) technology beyond

关键词： Diamond | Interface engineering | Moore's law | Thermal boundary resistance | Thermal management | Ultra-wide-bandgap | Wide-bandgap

摘要：-dependent and interface atom-dependent thermal boundary | -power devices due to its inherently low thermal | challenge in effective thermal management. In this | that can improve the accuracy of thermal property | imprecise thermal performance predictions for GaN/diamond

关键词： GaN/diamond heterostructures | Machine learning potential | Molecular dynamics | Thermal boundary resistance

摘要：, we explore the effects of thermal boundary | resistance as well as hydrogen diffusion on device | thermal properties on crystalline orientations, cooling | ( <= 10%) and specific orientations in enhancing thermal | , enabling improved thermal management and long-term

关键词： silicon | solar cell | heterostructures | molecular dynamics

摘要： revealed that the thermal boundary resistance (TBR) of | (NCD), reducing thermal resistance. This composite | displays. Due to GaN's low thermal conductivity | for thermal management, but integrating | This study addresses heat dissipation in GaN

关键词： Diamond | Ta-C coatings | GaN device | Heat dissipation

摘要： through-plane thermal boundary resistance is also | thermal conductivity while maintaining low filler | thermal conductivity. It was found that the orientation | printing speed, yields a superior thermal conductivity of | Developing polymer composites with high

关键词： Material extrusion additive manufacturing | Thermal conductivity | Filler orientation | Polymer composites

摘要： flux boundary conditions on thermal resistance is | thermal resistance based on analytical solutions is | temperature difference in thermal resistance modeling for | significance than traditional thermal resistance models. It | resistance, making it a generalized thermal resistance

关键词： Analytical solution | Heat flux weighted thermal resistance | Contact resistance | Thermal discrete element method | Pebble bed

摘要： reductions in the thermal boundary resistance (TBR) between | previous thermal characterization study had revealed that | engineering offers a viable route towards thermal management | Interfaces between polycrystalline (PC | ) diamond and Si substrates with thin dielectric

关键词： Transmission electron microscopy | Analytical electron microscopy | EELS | Interfaces | Phonon transport

4008-161-200 800-990-8900

国家科技图书文献中心

摘要： thermal boundary resistance between the thin part with | boundary resistance in determining thermal rectification. | A thermal* diode,which,by analogy to its* | building block for thermal circuits.To realize a thermal | diode,we demonstrate thermal* rectification in a GaAs*

摘要：Severe grain-boundary* embrittlement at ambient* | -boundary* brittleness in bulk L12 Co3Ti alloys is directly* | the boundary* plane, which fortunately, can be* | buffer significantly reduces the resistance* to* | . Moreover, the Co-atom segregation-induced grain-boundary

摘要： these cases. Since thermal boundary resistance | role in overall thermal* resistance, this study* | ) thermal* boundary resistances by linking low- and high* | thermal conductivity, offers a viable solution in both | Advancing Silicon (Si) technology beyond

摘要：-dependent and interface atom-dependent thermal boundary | -power devices due to its inherently low thermal | challenge in effective thermal* management. In this* | that can improve the accuracy of thermal* property* | imprecise thermal* performance predictions for GaN/diamond*

摘要：, we explore the effects of thermal boundary | resistance as well as hydrogen diffusion on device | thermal properties on crystalline orientations, cooling | ( <= 10%) and specific orientations in enhancing thermal | , enabling improved thermal* management and long-term*

摘要： revealed that the thermal* boundary resistance (TBR) of* | (NCD), reducing thermal* resistance. This composite* | displays. Due to GaN's low thermal* conductivity* | for thermal* management, but integrating* | This study addresses heat dissipation in GaN

摘要： through-plane thermal* boundary resistance is also* | thermal conductivity while maintaining low filler | thermal conductivity. It was found that the orientation | printing speed, yields a superior thermal* conductivity of* | Developing polymer composites with high

摘要： flux boundary* conditions on thermal resistance is* | thermal resistance based on analytical solutions is | temperature difference in thermal* resistance modeling for* | significance than traditional thermal* resistance models. It* | resistance, making it a generalized thermal resistance

摘要： reductions in the thermal* boundary resistance (TBR) between* | previous thermal* characterization study had revealed that* | engineering offers a viable route towards thermal* management* | Interfaces between polycrystalline (PC | ) diamond and Si substrates with thin dielectric