NSTL国家科技图书文献中心

1. Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga 2 O 3 by oxygen annealing achieving remarkable current blocking NSTL国家科技图书文献中心

Zeng, Ke | Bian, Zhengliang ... - 《Applied physics letters》 - 2024,124(21) - 212102.1～212102.6 - 共6页

摘要：In order to increase the concentration of Mg in single crystal and epitaxial Ga2O3 solely via diffusion doping technique, different variations of diffusion methods are explored. First, a one-step infi...

关键词： BETA-GA2O3 SINGLE-CRYSTALS | KV BREAKDOWN | DIFFUSION | GROWTH | FIGURE | FILMS

2. Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN EI 工程索引 SCIE Web of Science核心 NSTL国家科技图书文献中心

Lee, Kwang Jae | Nakazato, Yusuke ... - 《Nanotechnology》 - 2022,33(50) - ARTN 505704～ - 共8页 - 被引量：2

摘要：Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more re...

关键词： nanoporous GaN | p-type GaN | Mg out-diffusion | thin film growth | AlGaN | GaN | LIGHT-EMITTING-DIODES | MBE

3. Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers NSTL国家科技图书文献中心

Shoemaker, Daniel | Malakoutian, Mohamad...... - 《IEEE Transactions on Components, Packaging and Manufacturing Technology》 - 2021,11(8) - 1177～1186 - 共10页 - 被引量：16

摘要：GaN radio frequency (RF) power amplifiers offer many benefits including high power density, reduced device footprint, high operating voltage, and excellent gain and power-added efficiency. Accordingly...

关键词： Diamond | MODFETs | HEMTs | Temperature measurement | Cooling | Radio frequency | Flip-chip devices | Aluminum gallium nitride | diamond passivation | flip-chip devices...

4. Polycrystalline diamond growth on β-Ga_2O_3 for thermal management SCIE Web of Science核心 SCOPUS Scopus数据库 EI 工程索引 NSTL国家科技图书文献中心

Malakoutian, Mohamad... | Song, Yiwen ... - 《Applied physics express》 - 2021,14(5) - 55502.1～55502.4 - 共4页 - 被引量：23

摘要：We report polycrystalline diamond epitaxial growth on beta-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on beta-Ga2O3 accompanying the study of vario...

关键词： polycrystalline diamond | & | 946 | -Ga2O3 | thermal management | epitaxial growth | TDTR | FDTR | thermal boundary resistance

5. Experimental Determination of Velocity-Field Characteristic of Holes in GaN NSTL国家科技图书文献中心

Ji, Dong | Ercan, Burcu ... - 《IEEE Electron Device Letters》 - 2020,41(1) - 23～25 - 共3页 - 被引量：6

摘要：This study presents a photo-assistedmethod to measure the drift velocity of carriers in semiconductors, and successfully used to determine the drift velocity of holes in GaN. A p-i-n diode with a buri...

关键词： Gallium nitride (GaN) | drift velocity | saturation velocity | photo-assisted method | p-i-n diode

6. Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m Ω? cm2/1500 V GaN Diodes EI 工程索引 SCOPUS Scopus数据库 SCIE Web of Science核心 NSTL国家科技图书文献中心

Ji, Dong | Li, Siwei ... - 《IEEE Electron Device Letters》 - 2020,41(2) - 264～267 - 共4页 - 被引量：24

摘要：The design space of ion-implanted moat etch termination in GaN p-n diodes is discussed in this study. Based on experimental data, the design window for ion-implanted moat etch termination has been car...

关键词： Gallium nitride (GaN) | vertical diodes | moat etch termination | ion implantation

7. The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates SCOPUS Scopus数据库 EI 工程索引 SCIE Web of Science核心 NSTL国家科技图书文献中心

Song, Yiwen | Lundh, James Spencer ... - 《Journal of Electronic Packaging: Transactions of the ASME》 - 2020,142(4) - 1～10 - 共10页 - 被引量：8

摘要：Gallium nitride (GaN) has emerged as one of the most attractive base materials for next-generation high-power and high-frequency electronic devices. Recent efforts have focused on realizing vertical p...

关键词： Gallium nitride | Phonons | Steady state

8. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width NSTL国家科技图书文献中心

Chun, Jaeyi | Li, Wenwen ... - 《Advanced Electronic Materials》 - 2019,5(1) - 共8页 - 被引量：4

摘要：GaN-based vertical transistors have demonstrated its excellent properties for high-power and high-frequency electronic devices. This work introduces a GaN-based static induction transistor (SIT) which...

关键词： GaN | Schottky junction | static induction transistors | sub-micrometer dimension | vertical channel

9. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor SCOPUS Scopus数据库 SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Rajabi, Saba | Mandal, Saptarshi ... - 《IEEE Electron Device Letters》 - 2019,40(6) - 885～888 - 共4页 - 被引量：14

摘要：We report the first demonstration of Nitrogen polar (N-polar) GaN current aperture vertical electron transistor with a blocking electric field over 2.9 MV/cm. The devices were grown by metalorganic ch...

关键词： Nitrogenpolar galliumnitride | vertical transistors | 2DEG | Mg ion implantation

10. Neutralizing the polarization effect of diamond diode detectors using periodic forward bias pulses NSTL国家科技图书文献中心

Holmes, Jason M. | Dutta, Maitreya ... - 《Diamond and Related Materials》 - 2019,94 - 162～165 - 共4页 - 被引量：5

摘要：A new technique for neutralizing the polarization effect of diamond detectors has been demonstrated. The technique, which relies on the diamond detector to be configured as a diode, is to periodically...